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u |{
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pu |u y pq
tryspu| xr|u u~y ~ptuw~ q
trp~y y}u~ ty~p{r , spqpyr , ~ywu~yu p ~p|y y}u~u~yu ~rs y~yp pq . Dy{u~u rt ~
w~ t|
pr|u~y ~yx{p~}y }~}y ~ps
x{p}y . Xp~z uqpxrpu| p , }up~yu{p pp{uyy{p p~ry ~uqty}z . Bt~u yy . Ot~ru}u~~u tywu~yu ru u|uz
pr|u~y uqpxrpu| p , pr|u~~z r us ~ps
x{y ~p qpxu IGBT xr|| {py px}u , p -
zr , {u quuyrpu pqy|~ tpr|u~yz (uut rprpy} p
q{} ~p~s psuspp p{y} qpx} , . Puqpxrpu|y Xp (PX) y|y uu , r y|r {|uz { p yu~y q|puz y}u~u~y ~u t
y} y|xrp uu}u~~u ~pwu~yu ~p }t
|~ y|r |
rt~y{r p{u wu ru}u~~z u~|syy uqpxrp~y (tu{y-~y {y|su) . N ~pyq|uu pp~u~yu |
y|y uqpxrpu|y p - y|r |u}u~r , y~stp ~ y r~uxp~} {pxu uy
u} yx}u~u~y p ~p~s psuspp p{y} qpx} , p{ {p{ ru~ pxr
qrtr }py~ ( U/f=const ) . Sp{y} qpx} , rusu~upr , {p{
uqyu| |prpy}y {~tu~pp}y |
pu
u} tu|u~y ~pwu~y ,
ru|yu~yu} {y rpu~y y uyt} , quuyrp ty~p}yu{yu ~ps
x{y . 400 C@u}~ uqpxrpu| - metal-oxide-semiconductor field-effect transistor) y ryt ~ps
x{y y q|u}~ utp . Py}u~u~yu p~ uqpxrpu|uz - 500B . Ot~ru}u~~u tywu~yu ru up }|u~~y . I~}py tpr|u~yy r uqpxrpu| p : 10 {C y rqp~~z rp}y p~z uqpxrpu| p - ~p yyp } ru~~z {|pryp
|p yrtp ~~s ~pwu~y (dv/dt) y
zr uqpxrp~y ~~s {p y}u uu}u~~
pr|
rt~s ~pwu~y r u|} . Rru}u~~u utu|u~yu |u{yrtp tu}~s
zrp us
|yrp~y py~~~ tryspu|uz , 5 pxp) ;
ru|yy ~p r uu
~{y~yrp~y r px~|~
{yr
rt~s ~pwu~y , tpr|u~yu r u|
ur|u~y u~|syu{s up , y|y p~ us
|y
u} }t
| ~pt ru utrpyu|~u y|utrp~y }u , p {pxrpu ~u~ptuw~} , 4 t 10 |u ~pxpt uqpxrpu| r{y}y ~usuyu{y}y y y|
u y|} , r uy
ru|yu~yu} }~y |u{yrtp , ~ tpu rx}w~ q|uu y{u y}u~u~yu p~ uqpxrpu|uz (u|y tr
~ppr|u~~z {| p}pyrpu {p{ su~up , ~ywp pyu{
yq{
. Kp{ sry| p~uu , uqpx
us uu}u~~z uq
u}z rt~z p ~rrpu ~p {puru~~z ury y uqpxrpu|y p y us ~ps
x{y . Bustp rqypzu |{ trp {|pp uqpxrpu|uz p - r yu}u rxppu y }upu r|ur . Rru}u~~u utu|u~yu |u{yrtp xr|y| ttuwyrp ~~u ~pwu~yu u} tr
r~uru r uu}u~~z uq
u}z rt~z p y q|uu u~|sy~u
|